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Volumn 65, Issue 3, 2003, Pages 327-333

Fabrication of sub-10-nm Au-Pd structures using 30 keV electron beam lithography and lift-off

Author keywords

E beam lithography; Nanolithography; Two layer resist system

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FABRICATION; NANOSTRUCTURED MATERIALS; NANOTECHNOLOGY; PALLADIUM; POLYMETHYL METHACRYLATES;

EID: 0037363239     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00963-2     Document Type: Article
Times cited : (27)

References (10)
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  • 4
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    • Spontaneous formation of ordered indium nanowire array on Si(001)
    • Li J., Liang X., Jia J., Liu X., Wang J., Wang E., Xue Q. Spontaneous formation of ordered indium nanowire array on Si(001). Appl. Phys. Lett. 79:2001;2826-2828.
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  • 6
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    • Fabrication of 5-7 nm wide etched lines in silicon using 100 kV electron-beam lithography and poly(methylmethacrylate) resist
    • Chen W., Ahmed H. Fabrication of 5-7 nm wide etched lines in silicon using 100 kV electron-beam lithography and poly(methylmethacrylate) resist. Appl. Phys. Lett. 62:1993;1499-1501.
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  • 7
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    • Fabrication of sub-10-nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substrates
    • Chen W., Ahmed H. Fabrication of sub-10-nm structures by lift-off and by etching after electron-beam exposure of poly(methylmethacrylate) resist on solid substrates. J. Vac. Sci. Technol. B. 11:1993;2519-2523.
    • (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 2519-2523
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  • 9
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    • Fabrication of high-density nanostructures by electron beam lithography
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    • Sub-10-nm monogranular metallic lines formed by 200 kV electron-beam lithography and lift-off in poly(methylmethacrylate) resist
    • Vieu C., Mejias M., Carcenac F., Faini G., Launois H. Sub-10-nm monogranular metallic lines formed by 200 kV electron-beam lithography and lift-off in poly(methylmethacrylate) resist. Microelectron. Eng. 35:(1-4):1997;253-256.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.