Analysis of generation and annihilation of deep level defects in a silicon-irradiated bipolar junction transistor

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 963-969

  Madhu, K V ^a   Kulkarni, S R ^b   Ravindra, M ^c   Damle, R ^a  

^a BANGALORE UNIVERSITY   (India)

^b SBMJC   (India)

^c INDIAN SPACE RESEARCH ORGANISATION   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; GAIN MEASUREMENT; ION SOURCES; IRRADIATION; SILICON COMPOUNDS;

DEEP LEVEL DEFECTS; ION FLUENCE; RADIATION INDUCED GAIN DEGRADATION; TRAP CONCENTRATION;

BIPOLAR TRANSISTORS;

EID: 34547443352     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/023     Document Type: Article

References (38)

1. Wei A, Kosier S L, Schrimpf R D, Fleetwood D M and Combs W E 1994 Appl. Phys. Lett. 65 1918
2. Gnana Prakash A P, Ke S C and Siddappa K 2004 Semicond. Sci. Technol. 19 1029
3. Summers G P, Wolicki E A, Xapsos M A, Marshall P, Dale C J, Gehlhauen M A and Olice R D 1986 IEEE Trans. Nucl. Sci. NS-33 1282
4. Barnaby H J, Schrimpf R D, Sternberg A L, Berthe V, Cirba C R and Peace R L 2001 IEEE Trans. Nucl. Sci. 48 2074
5. Dale C J, Marshall P W, Burke E A, Summers G P and Wolicki E A 1988 IEEE Trans. Nucl. Sci. 35 1208
6. Lang D V 1974 J. Appl. Phys. 45 3023
7. Kulkarni S R, Sharma A, Joshi G R, Ravindra M and Damle R 2003 Radiat. Eff. Defects Solids 158 647
8. Kulkarni S R, Ravindra M, Joshi G R and Damle R 2004 Radiat. Eff. Defects Solids 159 273
9. Kulkarni S R, Ravindra M, Joshi G R and Damle R 2006 Nucl. Instrum. Methods B 251 157
10. Madhu K V, Kulkarni S R, Ravindra M and Damle R 2007 Nucl. Instrum. Methods B 254 98
11. Srour J R, Cheryl J M and Marshall P W 2003 IEEE Trans. Nucl. Sci. 50 653
12. Brotherton S D and Bradley P 1982 J. Appl. Phys. 53 5720
13. Srour J R, Long D M, Millward D G, Fitzwilson R L and Chadsey W L 1984 Radiation Effects and Dose Enhancement of Electron Materials (New Jersey: Noyes Publications)
14. Mooney P M, Cheng L J, Suli M, Gerson J D and Corbett J W 1977 Phys. Rev. B 15 3836
15. Messenger S R, Burke E A, Xapsos M A, Summers G P, Walters R J, Jun I and Thomas Jordan R J 2003 IEEE Trans. Nucl. Sci. 50 1919
16. Jun I, Xapsos M A, Messenger S R, Burke E A, Walters R J, Summers G P and Jordan T 2003 IEEE Trans. Nucl. Sci. 50 1924
17. Jun I and McAlpine W 2001 IEEE Trans. Nucl. Sci. 48 2034
18. Summers G P, Burke E A, Shapiro P, Messenger S R and Walters R J 1993 IEEE Trans. Nucl. Sci. 40 1372
19. Harris R D, Frasca A J and Patton M O 2005 IEEE Trans. Nucl. Sci. 52 2408
20. Messenger S R, Burke E A, Summers G P and Walters R J 2002 IEEE Trans. Nucl. Sci. 49 2690
21. Messenger S R, Burke E A, Summers G P, Xapsos M A, Walters R J, Jackson E M and Weaver B D 1999 IEEE Trans. Nucl. Sci. 46 1595
22. Schroder D K 1990 Semiconductor Material and Device Characterization (NewYork: Wiley) pp 309, 361-2
23. Watanabe K and Munakata C 1993 Semicond. Sci. Technol. 8 230
24. Pickel J C, Kalma A H, Hopkinson G R and Marshall C J 2003 IEEE Trans. Nucl. Sci. 50 671
25. Hangleiter A 1987 Phys. Rev. B 35 9149
26. Shockley W and Read W T 1952 Phys. Rev. 87 835
27. Khanna V K 2004 Eur. J. Phys. 25 221
28. Libertino S and Coffa S 2001 Phys. Rev. B 63 195206
29. Khan A, Yamaguchi M, Ohshita Y, Dharmarasu N, Araki K, Abe T, Itoh H, Ohshima T, Imaizumi M and Matsuda S 2001 J. Appl. Phys. 90 1170
30. Walker J W and Sah C T 1973 Phys. Rev. B 7 4587
31. Pellegrino P, Leveque P, Lalita J, Hallen A, Jagadish C and Svensson B G 2001 Phys. Rev. B 64 195211
32. Brotherton S D and Bradley P 1982 J. Appl. Phys. 53 5720
33. Khan A, Yamaguchi M, Hisamatsu T and Matsuda S 2000 J. Appl. Phys. 87 2162
34. Larsen A N, Mesli A, Nielsen K B, Nielsen H K, Dobaczewski L, Adey J, Jones R, Palmer D W, Briddon P R and berg S 2006 Phys. Rev. Lett. 97 106402
35. Giri P K and MohapatraY N 1997 Appl. Phys. Lett. 71 1682
36. Giri P K and MohapatraY N 1998 J. Appl. Phys. 84 1901
37. Benton J L, Libertino S, Kringhoj P, Eaglesham D J, Coffa S and Poate J M 1997 J. Appl. Phys. 82 120
38. Cherki M and Kalma A H 1970 Phys. Rev. B 1 640