Highly optimized tight-binding model of silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 55, Issue 3, 1997, Pages 1528-1544

  Lenosky, Thomas J ^a   Kress, Joel D ^a   Kwon, Inhee ^a   Voter, Arthur F ^a   Edwards, Byard ^b  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b Laboratory of Atomic and Solid State Physics and Sibley School of Mechanical and Aerospace Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000165469     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.55.1528     Document Type: Article

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