A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

Semiconductor Science and Technology

Volumn 22, Issue 7, 2007, Pages 793-797

  Guo, Dongming ^a   Liu, Jingyuan ^a   Kang, Renke ^a   Jin, Zhuji ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MECHANICAL POLISHING; PARAMETER ESTIMATION; SURFACE PROPERTIES; SURFACE ROUGHNESS;

BRINKMAN EQUATIONS; DARCYS LAW; SLURRY FLOW;

SILICON WAFERS;

EID: 34547322878     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/7/020     Document Type: Article

References (15)

1. Liu J Y, Jin Z J, Guo D M and Kang R K 2006 Effect of suspending abrasives on the lubrication properties of slurry in chemical mechanical polishing of silicon wafer Key Eng. Mater. 304-305 359-63
2. Liu J Y, Guo D M, Jin Z J and Kang R K 2006 A suspending abrasives and porous pad model for the analysis of lubrication in chemical mechanical polishing Key Eng. Mater. 315-316 775-78
3. Runnels S R and Eyman L M 1994 Tribology analysis of chemical mechanical polishing J. Electrochem. Soc. 141 1698-1701
4. Rogers C, Coppeta J, Racz L, Philipossian A, Kaufman F B and Bramono D 1998 Analysis of flow between a wafer and pad during CMP processes J. Electron. Mater. 27 1082-87
5. Park S S, Cho C H and Ahn Y 2000 Hydrodynamic analysis of chemical mechanical polishing process Tribol. Int. 33 723-30
6. Chen J M and Fang Y 2002 Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing IEEE Trans. Semicond. Manuf. 15 39-44
7. Thakurta D G, Schwendeman D W, Gutmann R J, Shankar S, Jiang L and Gill W N 2002 Three-dimensional wafer-scale copper chemical-mechanical planarization model Thin Solid Films 414 78-90
8. Mullany B and Byrne G 2003 The effect of slurry viscosity on chemical-mechanical polishing of silicon wafers J. Mater. Process. Technol. 132 28-34
9. Bullen D, Scarfo A, Koch A, Bramono D P Y, Coppeta J and Racz L 2000 In situ technique for dynamic fluid film pressure measurement during chemical mechanical polishing J. Electrochem. Soc. 147 2741-43
10. Hocheng H and Cheng C Y 2002 Visualized characterization of slurry film between wafer and pad during chemical mechanical planarization IEEE Trans. Semicond. Manuf. 15 45-50
11. Tichy J A 1995 A porous media model for thin film lubrication Trans. ASME 117 16-21
12. Sinha P, Kennedy S J, Rodkiewicz C M, Chandra P, Sharma R and Prasad K R 1987 Effects of surface roughness and additives in lubrication: generalized Reynolds equation and its application to elastohydrodynamic film Proc. Inst. Mech. Eng. 201 1-9
13. Singh C and Sinha P 1982 The three-dimensional Reynolds equation for micropolar-fluid-lubricated bearings Wear 76 199-209
14. Luo J F and Dornfeld D A 2001 Material removal mechanism in chemical mechanical polishing: Theory and Modeling IEEE Trans. Semicond. Manuf. 14 112-33
15. McGrath J and Davis C 2004 Polishing pad surface characterisation in chemical mechanical planarisation J. Mater. Process. Technol. 153-154 666-73