Visualized characterization of slurry film between wafer and pad during chemical mechanical planarization

IEEE Transactions on Semiconductor Manufacturing

Volumn 15, Issue 1, 2002, Pages 45-50

  Hocheng, Hong ^a   Cheng, Chih Yung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

CMP; Flow visualization; Gray value; Nonuniformity; Planarization; Polishing; Slurry

Indexed keywords

CHARGE COUPLED DEVICES; COMPUTER SIMULATION; FLOW VISUALIZATION; IMAGE ANALYSIS; MICROELECTRONICS; SLURRIES;

CHEMICAL MECHANICAL PLANARIZATION; FLUID FILMS;

VLSI CIRCUITS;

EID: 0036474720     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.983443     Document Type: Article

References (9)

1. Modeling of chemical-mechanical polishing: A review
2. A kinematic analysis of CMP based on velocity model
3. Effects of kinematic variables on nonuniformity in chemical mechanical planarization
4. Tribology analysis of chemical-mechanical polishing
5. A technique for measurement slurry flow dynamic during CMP
6. Numerical flow visualization of slurry in a CMP process
7. Pressure distribution at silicon-polishing pad interface
8. Feature-Scale fluid-based erosion modeling for chemical-mechanical polishing