Optical properties of self-assembled Ge wires grown on Si(113)

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2448-2450

  Halsall, M P ^a   Omi, H ^b   Ogino, T ^b  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION BANDS; GE FRACTION; GE ISLAND; ISLANDING; LINE SHAPE; LOW GROWTH TEMPERATURE; LOW TEMPERATURE PHOTOLUMINESCENCE; MICRO RAMAN MEASUREMENTS; PHOTOLUMINESCENCE LINES; RAMAN SCATTERING MEASUREMENTS; SELF-ASSEMBLED; SI (113); SOLID-SOURCE MOLECULAR BEAM EPITAXY; STOCHASTIC CALCULATIONS;

ATOMIC FORCE MICROSCOPY; GERMANIUM; GROWTH TEMPERATURE; HETEROJUNCTIONS; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955981916     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509120     Document Type: Article

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