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Volumn 45, Issue 5 II, 2004, Pages 1296-1299

Energy levels of InAs/lnP QD system with GaAs and InGaAs insertion layers by C-V and DLTS methods

Author keywords

Deep level transient spectroscopy; Emission and capture processes; Energy level; InAs InP; Quantum dots

Indexed keywords


EID: 10644258628     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper
Times cited : (7)

References (17)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.