Modeling and simulation for the enhancement of electron storage in a stacked multilayer nanocrystallite silicon floating gate memory

Journal of Applied Physics

Volumn 102, Issue 1, 2007, Pages

  Yu, L W ^a   Chen, K J ^a   Ding, H L ^a   Xu, J ^a   Liu, K ^a   Li, W ^a   Wang, X ^a   Huang, X F ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); MULTILAYERS; SEMICONDUCTING SILICON;

ELECTRON STORAGE; INJECTION SEQUENCES; SILICON FLOATING GATE MEMORY; STORAGE ENHANCEMENT MECHANISM;

NANOCRYSTALLITES;

EID: 34547179374     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2751417     Document Type: Article

References (14)

1. S. Tiwari, F. Rona, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 0003-6951 10.1063/1.116085 68, 1377 (1996).
2. T. Feng, H. B. Yu, M. Dicken, J. R. Heath, and H. A. Atwater, Appl. Phys. Lett. 0003-6951 10.1063/1.1852078 86, 033103 (2005).
3. S. Huang and S. Oda, Appl. Phys. Lett. 0003-6951 10.1063/1.2115069 87, 173107 (2005).
4. C. Y. Ng, T. P. Chen, D. Sreeduth, Q. Chen, L. Ding, and A. Du, Thin Solid Films 0040-6090 10.1016/j.tsf.2005.09.031 504, 25 (2006).
5. D. Cha, J. H. Shin, S. Park, E. Lee, Y. Park, Y. Park, I. Yoo, K. S. Seol, and S. Choi, Appl. Phys. Lett. 0003-6951 10.1063/1.2404586 89, 243513 (2006).
6. Y. Liu, T. P. Chen, L. Ding, S. Zhang, Y. Q. Fu, and S. Fung, J. Appl. Phys. 0021-8979 10.1063/1.2374929 100, 096111 (2006).
7. T. Z. Lu, M. Alexe, R. Scholz, V. Talelaev, and M. Zacharias, Appl. Phys. Lett. 0003-6951 10.1063/1.2132083 87, 202110 (2005).
8. T. Z. Lu, M. Alexe, R. Scholz, V. Talalaev, R. J. Zhang, and M. Zacharias, J. Appl. Phys. 0021-8979 10.1063/1.2214300 100, 014310 (2006).
9. L. C. Wu, K. J. Chen, J. M. Wang, X. F. Huang, Z. T. Song, and W. L. Liu, Appl. Phys. Lett. 0003-6951 10.1063/1.2352796 89, 112118 (2006).
10. J. Wang, L. Wu, K. Chen, L. Yu, X. Wang, J. Song, and X. Huang, J. Appl. Phys. 0021-8979 10.1063/1.2409280 101, 014325 (2007).
11. R. Ohba, N. Sugiyama, K. Uchida, J. Koga, and A. Toriumi, IEEE Trans. Electron Devices 0018-9383 10.1109/TED.2002.801296 49, 1392 (2002).
12. I. M. Ruzin, V. Chandrasekhar, E. I. Levin, and L. I. Glazman, Phys. Rev. B 0163-1829 10.1103/PhysRevB.45.13469 45, 13469 (1992).
13. W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, and L. P. Kouwenhoven, Rev. Mod. Phys. 0034-6861 10.1103/RevModPhys.75. 1 75, 1 (2002).
14. F. Mandl, Statistical Physics (Wiley, New York, 1988).