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Volumn 51, Issue 24, 1995, Pages 17379-17389

Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide

Author keywords

[No Author keywords available]

Indexed keywords


EID: 35949005389     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.51.17379     Document Type: Article
Times cited : (223)

References (96)
  • 4
    • 84927271860 scopus 로고    scopus 로고
    • Silicon Nitride in Electronics, edited by V. I. Belyi et al.., Materials Science Monographs Vol. 34 (Elsevier, New York, 1988).
  • 47
    • 84927271859 scopus 로고    scopus 로고
    • Y. Xu, and W. Y. Ching, in SiO2italic and Its Interfaces, edited by S. T. Pantelides and G. Lucovsky, MRS Symposia Proceedings No. 105 (Materials Research Society, Pittsburgh, 1988), p. 181.
  • 93
    • 84927271858 scopus 로고    scopus 로고
    • Our calculated results for curlep1( ω ) for alpha-SiO2 are slightly different from those presented in Ref. 65 because of the improvement in the K-K conversion. The previous calculation contains a small error which affects the curlep1( ω ) value in the conversion process.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.