Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 1038-1042

  Servati, P ^a   Nathan, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MATHEMATICAL MODELS;

DYNAMIC MODEL; TAIL STATES;

THIN FILM TRANSISTORS;

EID: 0036565075     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1472427     Document Type: Article

References (17)