New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI reliabilities for 65nm node CMOS devices and beyond

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Chung, Steve S ^a   Huang, D C ^b   Tsai, Y J ^a   Lai, C S ^b   Tsai, C H ^c   Liu, P W ^c   Lin, Y H ^c   Tsai, C T ^c   Ma, G H ^c   Chien, S C ^c   Sun, S W ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; CIVIL AVIATION; ELECTRON DEVICES; HOT CARRIERS; IMPACT IONIZATION; NEGATIVE TEMPERATURE COEFFICIENT; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; STRAIN; STRAIN RATE; SULFATE MINERALS; TECHNOLOGY; THERMODYNAMIC STABILITY;

65-NM NODES; BIAXIAL STRAINING; CMOS DEVICES; CONTROL DEVICES; DIFFERENT MECHANISMS; HOT-CARRIER RELIABILITY; N-MOSFET; P-MOSFETS; PMOSFET; PROCESS COMPLEXITY; STRAIN ENGINEERING; STRAINED STRUCTURES; UNI-AXIAL STRAINS;

MOSFET DEVICES;

EID: 46049090818     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346774     Document Type: Conference Paper

References (15)

1. J. Hoyt et al., in Tech. Dig. IEDM, p. 23, 2002.
2. K. Rim et al., Symp. on VLSI Tech., p. 98, 2004.
3. S. Ito et al., in Tech. Dig. IEDM, p. 247, 2000.
4. P. R. Chidambaram et al., Symp. on VLSI Tech., p. 48, 2004.
5. K. Mistry et al., Symp. on VLSI Tech., p. 50, 2004.
6. M. Yang et al., in Tech. Dig. IEDM, p. 453, 2003.
7. T. Mizuno et al., Symp. on VLSI Tech., p. 97, 2003.
8. J. R. Hwang et al., Symp. on VLSI Tech., p. 90, 2004.
9. S. S. Chung et al., Symp. on VLSI Tech., p. 86, 2005.
10. S. S. Chung et al., in Tech. Dig. IEDM, p. 567, 2005.
11. S. S. Chung et al., Symp. on VLSI Tech., p. 74, 2002.
12. S. S. Chung et al., Tech. Dig. IEDM, p. 513, 2002.
13. S. Thompson et al., IEEE T-ED, vol. 53, p. 1010, 2006.
14. G. D. Lee et al., Proc. of IPFA, p. 37, 2006.
15. C. H. Tsai et al., Symp. on VLSI Tech., p. 236, 2006.