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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2134-2139

Breakdown voltage in uniaxially strained n-channel SOI mosfet

(5) Watanabe, Naoya a Kojima, Takeaki a Maeda, Yasuhiro a Nishisaka, Mika a Asano, Tanemasa a

a KYUSHU INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Cantilever; Drain breakdown voltage; Floating body effect; Impact ionization; MOSFET; SOI; Strain effect; Strained Si

Indexed keywords

CARRIER MOBILITY; DEFORMATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMPACT IONIZATION; SATURATION (MATERIALS COMPOSITION); SEPARATION; SILICON ON INSULATOR TECHNOLOGY; STRAIN; SUBSTRATES; TENSILE STRENGTH;

FLOATING-BODY EFFECT; STRAIN EFFECTS; STRAINED SILICON;

MOSFET DEVICES;

EID: 3142564895 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.2134 Document Type: Conference Paper

Times cited : (11)

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