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Volumn 4, Issue SUPPL. 1, 1999, Pages

Effect of oxygen ion implantation in gallium nitride

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; COMPUTER SIMULATION; CRYSTAL DEFECTS; EPITAXIAL GROWTH; HELIUM; HIGH TEMPERATURE OPERATIONS; INTEGRATION; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN; PERTURBATION TECHNIQUES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; X RAY DIFFRACTION;

EID: 3442881715     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s109257830000315x     Document Type: Conference Paper
Times cited : (1)

References (18)
  • 2
    • 84888960847 scopus 로고    scopus 로고
    • Power Semiconductor Materials and Devices, edited by S.J. Pearton, R.J. Shul, E. Wolfgang, F. Ren, and S. Tenconi Warrendale, PA
    • M.S. Shur, in Power Semiconductor Materials and Devices, edited by S.J. Pearton, R.J. Shul, E. Wolfgang, F. Ren, and S. Tenconi (Mater. Res. Soc. Proc. 483, Warrendale, PA, 1998) pp. 15-26.
    • (1998) Mater. Res. Soc. Proc. , vol.483 , pp. 15-26
    • Shur, M.S.1
  • 15
    • 0008689071 scopus 로고
    • edited by J.R. Tesmer and M. Nastasi Materials Research Society, Pittsburgh, PA
    • M.L. Swanson, in Handbook of Modern Ion Beam Analysis, edited by J.R. Tesmer and M. Nastasi (Materials Research Society, Pittsburgh, PA, 1995) p. 258.
    • (1995) Handbook of Modern Ion Beam Analysis , pp. 258
    • Swanson, M.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.