Epitaxial lateral overgrowth of GaN with chloride-based growth chemistries in both hydride and metalorganic vapor phase epitaxy

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Zhang, R ^a,b   Zhang, L ^a   Hansen, D M ^a   Boleslawski, Marek P ^c   Chen, K L ^b   Lu, D Q ^b   Shen, B ^b   Zheng, Y D ^b   Kuech, T F ^a  

^a University of Wisconsin Madison   (United States)

^b NANJING UNIVERSITY   (China)

^c Sigma Aldrich Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DEPOSITION; ETCHING; GALLIUM NITRIDE; MASKS; SUBSTRATES; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

LATERAL EPITAXY; MASK STRIPES; SEED COLUMNS;

THIN FILMS;

EID: 3442875680     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002908     Document Type: Conference Paper

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