Fabrication and characterization of a trilayer germanium nanocrystal memory device with hafnium dioxide as the tunnel dielectric

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 46-50

  Ng, T H ^a   Ho, V ^a   Teo, L W ^b   Tay, M S ^a   Koh, B H ^a   Chim, W K ^a,b   Choi, W K ^a,b   Du, A Y ^c   Tung, C H ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b SINGAPORE MIT ALLIANCE   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Charge retention; Charge storage; Germanium nanocrystals; High tunnel dielectric; Memory device

Indexed keywords

CHARGE RETENTION; CHARGE STORAGE; GERMANIUM NANOCRYSTALS; HIGH-KM TUNNEL DIELECTRIC; TUNNEL OXIDES;

DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; GERMANIUM; HAFNIUM COMPOUNDS; OXIDES; SILICON; SUBSTRATES; THICKNESS CONTROL; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 4344664686     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.046     Document Type: Article

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