Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

Chinese Physics

Volumn 16, Issue 4, 2007, Pages 1119-1124

  Xue, Shu Wen ^a,b   Zu, Xiao Tao ^a   Su, Hai Qiao ^a   Zheng, Wan Guo ^c   Xiang, Xia ^a   Deng, Hong ^a   Yang, Chun Rong ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b LINGNAN NORMAL UNIVERSITY   (China)

^c RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

Ion implantation; Photoluminescence; Thermal annealing; ZnO thin films

Indexed keywords

ANNEALING; GERMANIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SAPPHIRE; SOL-GEL PROCESS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURE; DEEP LEVEL EMISSION (DLE); NEAR BAND EDGE (NBE); ULTRAVIOLET EMISSION;

THIN FILMS;

EID: 34250169849     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/4/043     Document Type: Article

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