Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals

Journal of Applied Physics

Volumn 93, Issue 11, 2003, Pages 8995-9000

  Monteiro, T ^a   Boemare, C ^a   Soares, M J ^a   Rita, E ^b   Alves, E ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; IRON; LOW TEMPERATURE EFFECTS; OXIDATION; PHOTOLUMINESCENCE; POSITIVE IONS; VACUUM;

DAMAGE RECOVERY;

SINGLE CRYSTALS;

EID: 0038341867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1573341     Document Type: Article

References (32)

1. C. Boemare, T. Monteiro, M. J. Soares, J. G. Guilherme, and E. Alves, Physica B 308-310, 985 (2001).
2. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 376 (2002).
3. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 40, L334 (2001).
4. K. Ueda, H. Tabata, and T. Kawai, Appl. Phys. Lett. 79, 988 (2001).
5. C. H. Park, S. B. Zhang, and S.-H. Wei, Phys. Rev. B 66, 73202 (2002).
6. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
7. E. Alves, K. Lorentz, R. Vianden, C. Boemare, M. J. Soares, and T. Monteiro, Mod. Phys. Lett. B 28-29, 1281 (2001).
8. R. E. Sherriff, D. C. Reynolds, D. C. Look, B. Jogai, J. E. Hoelscher, T. C. Collins, G. Cantwell, and W. C. Harsch, J. Appl. Phys. 88, 3454 (2000).
9. K. Thonke, Th. Gruber, N. Teofilov, R. Schonfelder, A. Waag, and R. Sauer, Physica B 308-310, 945 (2001).
10. S. Takata, T. Minami, H. Nanto, and T. Kawamura, Phys. Status Solidi A 65, K83 (1981).
11. F. Leiter, H. Zhou, F. Henecker, A. Hofstaetter, D. M. Hoffmann, and B. K. Meyer, Physica B 308-310, 908 (2001).
12. K. Vanheusden, W. L. Warren, C. H. Seager, D. R. Tallant, J. A. Voigt, and B. E. Gnade, J. Appl. Phys. 79, 7983 (1996).
13. C. Gaspar, F. Costa, and T. Monteiro, J. Mater. Sci.: Mater. Electron. 12, 269 (2001).
14. B. Lin, Z. Fu, Y. Jia, and G. Liao, J. Electrochem. Soc. 148, G110 (2001).
15. S. A. Studenikin, N. Golego, and M. Cocivera, J. Appl. Phys. 84, 2287 (1998).
16. A. van Dijken, E. A. Meulenkamp, D. Vanmaekelbergh, and A. Meijerink, J. Lumin. 90, 123 (2000).
17. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
18. S. B. Zhang, S. H. Wei, and A. Zunger, Phys. Rev. B 63, 75205 (2001).
19. R. Dingle, Phys. Rev. Lett. 23, 579 (1969).
20. I. Broser and R. K. F. Germer, Solid-State Electron. 21, 1597 (1978).
21. D. J. Robbins, J. Lumin. 24/25, 137 (1981).
22. P. J. Dean, D. J. Robbins, S. G. Bishop, J. A. Savage, and P. Porteous, J. Phys. C 14, 2847 (1981).
23. P. Dahan, V. Fleurov, P. Thurian, R. Heitz, A. Hoffmann, and I. Broser, J. Phys.: Condens. Matter 10, 2007 (1998).
24. N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, and G. Cantwell, Appl. Phys. Lett. 81, 622 (2002).
25. O. F. Scirmer and D. Zwingel, Solid State Commun. 8, 1559 (1970).
26. D. Zwingel, J. Lumin. 5, 358 (1972).
27. D. C. Reynolds, D. C. Look, and B. Jogai, J. Appl. Phys. 89, 6189 (2001).
28. D. M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B. Meyer, S. B. Orlinskii, J. Schmidt, and P. G. Baranov, Phys. Rev. Lett. 88, 45504 (2002).
29. D. C. Reynolds, D. C. Look, B. Jogai, C. W. Litton, T. C. Collins, W. Harsch, and G. Cantwell, Phys. Rev. B 57, 12151 (1998).
30. R. Heitz, A. Hoffmann, and I. Broser, Phys. Rev. B 45, 8977 (1992).
31. C. Gaspar, L. Pereira, F. M. Costa, T. Monteiro, J. Han, A. M. R. Senos, and P. Mantas, 2000 International Semiconducting and Insulating Materials Conference, SIMC-XI, edited C. Jagadish and N. J. Welham (IEEE, New York 2001), p. 326 (ISBN: 0-7803-5815-5).
32. H. J. Schulz and M. Thiede, Phys. Rev. B 35, 18 (1987).