Influence of annealing on ZnO thin film grown by plasma-assisted MOCVD

Vacuum

Volumn 69, Issue 4, 2003, Pages 473-476

  Du, Guotong ^a   Wang, Jinzhong ^a   Wang, Xinqiang ^a   Jiang, Xiuying ^a   Yang, Shuren ^a   Ma, Yan ^a   Yan, Wei ^a   Gao, Dingsan ^a   Liu, Xiang ^b   Cao, Hui ^b   Xu, Junying ^b   Chang, R P H ^b  

^a JILIN UNIVERSITY   (China)

^b NONE

Author keywords

Optical transmission; PL; Plasma assisted MOCVD; XRD

Indexed keywords

ANNEALING; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRAIN; TENSILE STRENGTH; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

COMPRESSIVE STRAIN;

ZINC OXIDE;

EID: 0037462257     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(02)00538-9     Document Type: Article

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