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Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 232, Issue 3-4, 1997, Pages 321-325

Photoluminescence from Ge+-implanted SiO2 films on Si substrate and its mechanism

(4) Gao, T a Bao, X M a Yan, F a Tong, S a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COLOR CENTERS; GERMANIUM OXIDES; INFRARED DEVICES; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; SILICA; SILICON; SILICON OXIDES; TEMPERATURE;

ANNEALING TEMPERATURES; CRYSTAL SILICON; LOW TEMPERATURES; NEAR-INFRARED EMISSIONS; QUANTUM CONFINEMENT EFFECTS; ULTRAVIOLET PEAKS; ULTRAVIOLET PHOTOLUMINESCENCE; X RAY PHOTOEMISSION SPECTROSCOPY;

SULFUR COMPOUNDS;

EID: 0040561030 PISSN: 03759601 EISSN: None Source Type: Journal
DOI: 10.1016/S0375-9601(97)00387-3 Document Type: Article

Times cited : (31)

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