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Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

Electrical and deep-level characterization of GaP1-x Nx grown by gas-source molecular beam epitaxy

(4) Kaneko, M a Hashizume, T a Odnoblyudov, V A b Tu, C W b

a HOKKAIDO UNIVERSITY (Japan)

b UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVELS; SCHOTTKY CONTACT STRUCTURE; THERMAL ADMITTANCE SPECTROSCOPY;

CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; GAS SOURCE MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM PHOSPHIDE;

EID: 34249942750 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2732451 Document Type: Article

Times cited : (10)

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