Gas-source molecular-beam epitaxial growth of Ga(In)NP on GaP(100) substrates for yellow-amber light-emitting devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1317-1319

  Odnoblyudov, V A ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMAL SUBSTRATE TEMPERATURE; REDSHIFT;

LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 31144467323     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1878996     Document Type: Conference Paper

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