Unintentional carbon and hydrogen incorporation in GaNP grown by metal-organic chemical vapor deposition

Journal of Crystal Growth

Volumn 259, Issue 3, 2003, Pages 223-231

  Geisz, J F ^a   Reedy, R C ^a   Keyes, B M ^a   Metzger, W K ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A1. Impurities; A3. Metalorganic chemical vapor deposition; B2. Semiconducting III V materials; B3. Solar cells

Indexed keywords

CARBON; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SOLAR CELLS;

SOLAR CELL DEVICES;

CRYSTAL GROWTH;

EID: 0142031448     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.07.011     Document Type: Article

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