Optical properties of Ge nanowires grown on silicon (100) and (111) substrates

Materials Research Society Symposium Proceedings

Volumn 832, Issue , 2005, Pages 329-334

  Sharma, V ^a   Kamenev, B V ^a   Tsybeskov, L ^a   Kamins, T I ^b  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; HETEROINTERFACE; NANOWIRES; SUBSTRATE INTERFACE;

CRYSTALLOGRAPHY; LIGHT EMISSION; MICROMETERS; RAMAN SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES;

NANOSTRUCTURED MATERIALS;

EID: 23844460210     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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