Analysis of the electron traps at the 4H-SiC/SiO2 interface using combined CV/thermally stimulated current measurements

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 213-217

  Rudenko, T E ^a   Olafsson H O ^b   Sveinbjornsson E O ^b   Osiyuk, I P ^a   Tyagulski, I P ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

4H SiC; Interface states; Metal insulator semiconductor; Thermally stimulated current

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENT MEASUREMENT; ELECTRON TRAPS; EPITAXIAL GROWTH; FABRICATION; INTERFACES (MATERIALS); MOSFET DEVICES; SILICA; SILICON CARBIDE;

INTERFACE STATES; METAL-INSULATOR-SEMICONDUCTORS;

MOS CAPACITORS;

EID: 1642603303     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.039     Document Type: Conference Paper

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