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Volumn 8, Issue 1, 1996, Pages 113-115

Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRON EMISSION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0029779491     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.475796     Document Type: Article
Times cited : (48)

References (14)
  • 2
    • 0026938145 scopus 로고
    • Nanoscale tera-hertz metal-semiconductor-metal photodetectors
    • S. Y. Chou and M. Y. Liu, "Nanoscale tera-hertz metal-semiconductor-metal photodetectors," IEEE J. Quantum Electron., vol. 28, pp. 2358-2368, 1992.
    • (1992) IEEE J. Quantum Electron. , vol.28 , pp. 2358-2368
    • Chou, S.Y.1    Liu, M.Y.2
  • 4
    • 0019299963 scopus 로고
    • Metal-semiconductor-metal photodetector for high-speed optoelectronic circuits
    • 1
    • T. Sugeta, T. Urisu, S. Sakata, and Y. Mizushima, "Metal-semiconductor-metal photodetector for high-speed optoelectronic circuits," Jpn. J. Appl. Phys., vol. 19, suppl. 19-1, pp. 459-464, 1979.
    • (1979) Jpn. J. Appl. Phys. , vol.19 , Issue.19 SUPPL. , pp. 459-464
    • Sugeta, T.1    Urisu, T.2    Sakata, S.3    Mizushima, Y.4
  • 9
    • 0026821072 scopus 로고
    • Photoconductive gain in a Schottky barrier photodiode
    • S. F. Soares, "Photoconductive gain in a Schottky barrier photodiode," Jpn. J. Appl. Phys., vol. 31, pp. 210-216, 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 210-216
    • Soares, S.F.1
  • 13
    • 0001196277 scopus 로고
    • Properties of alternately charged coplanar parallel strips by conformal mappings
    • Y. C. Lim and R. A. Moore, "Properties of alternately charged coplanar parallel strips by conformal mappings," IEEE Trans. Electron Devices, vol. ED-15, pp. 173-180, 1968.
    • (1968) IEEE Trans. Electron Devices , vol.ED-15 , pp. 173-180
    • Lim, Y.C.1    Moore, R.A.2
  • 14
    • 0001491539 scopus 로고
    • Mechanism of Schottky barrier formation: The role of amphoteric native defects
    • W. Walukiewicz, "Mechanism of Schottky barrier formation: The role of amphoteric native defects," J. Vac. Sci. Technol. B, vol. 5, pp. 1062-1067, 1987.
    • (1987) J. Vac. Sci. Technol. B , vol.5 , pp. 1062-1067
    • Walukiewicz, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.