SnO2:Sb - A new material for high-temperature MEMS heater applications: Performance and limitations

Sensors and Actuators, B: Chemical

Volumn 124, Issue 2, 2007, Pages 421-428

  Spannhake, J ^a   Helwig, A ^a   Muller G ^a   Faglia, G ^b   Sberveglieri, G ^b   Doll, T ^c   Wassner, T ^d   Eickhoff, M ^d  

^a AIRBUS GROUP INNOVATIONS   (Germany)

^b INFM   (Italy)

^c JOHANNES GUTENBERG UNIVERSITY   (Germany)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Antimony doped tin oxide; High temperature applications; High temperature heater materials; MEMS heater devices; Thermal IR emitter

Indexed keywords

ANTIMONY; DEGRADATION; DIFFUSION; HIGH TEMPERATURE APPLICATIONS; IMPURITIES; RESISTORS; TIN OXIDES;

ANTIMONY-DOPED TIN OXIDE; HIGH-TEMPERATURE HEATER MATERIALS; MEMS HEATER DEVICES; THERMAL IR EMITTERS;

MEMS;

EID: 34249864139     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2007.01.004     Document Type: Article

References (33)

1. Yuasa H., Ohya S., Karasawa S., Akimoto K., Kodato S., and Takahashi K. Single crystal silicon micromachined pulsed infrared light source. Transducers 1997. Chicago, June 16-19 (1997)
2. Rasulev U.Kh., and Nazarov E.G. Surface ionization ion mobility spectrometry. Anal. Chem. 71 (1996) 273-278
3. Ohlckers P., Ferber A.M., Dmitriev V.K., and Kirpilenko G. A photoacoustic gas sensing silicon microsystem. Transducers 2001. Munich, Germany, June 10-14 (2001) 780-783
4. M. Luthardt, Ein flammenloser Ionisationsdetektor, Chemie in Labor und Biotechnik, 48 (5) (1997) 197-198.
5. Rasulev U.Kh., Nazarov E.G., and Khudaeva G.B. Chromatographic determination of trace amounts of amines using surface ionization detector. J. Chromatogr. A 704 (1995) 473-482
6. Spannhake J., Schulz O., Helwig A., Krenkow A., Müller G., and Doll T. High-temperature MEMS heater platforms: long-term performance of metal and semiconductor heater materials. Sensors 6 (2006) 405-419
7. Bauer D., Heeger M., Gebhard M., and Benecke W. Design and fabrication of a thermal infrared emitter. Sensors Actuators A55 (1996) 57-63
8. Sze S.M. Physics of Semiconductor Devices (1981), John Wiley & Sons, New York
9. Landolt-Börnstein. Semiconductors: Physics of Group IV Elements and III-V Compounds, vol. 17a (1982), Springer-Verlag, Berlin. 3-540-10610-3
10. Müller G., Friedberger A., Kreisl P., Ahlers S., Schulz O., and Becker T. A MEMS toolkit for metal-oxide-based gas sensing systems. Thin Solid Films 436 (2003) 34-45
11. Sberveglieri G., Hellmich W., and Müller G. Silicon hotplates for metal oxide gas sensor elements. Microsyst. Technol. 3 (1997) 183-190
12. 2 gas sensors: simultaneous monitoring of resistances and temperatures. Sensors Actuators B58 (1999) 30
13. Brand D., Krauss A., van der Schoot B., Weimar U., Barsan N., Göpel W., and de Rooij N.F. Design and fabrification of high-temperature micro-hotplate for drop-coated gas sensors. Sensors Actuators B68 (2000) 223-233
14. Friedberger A., Kreisl P., Rose E., Müller G., Kühner G., Wöllenstein J., and Böttner H. Micromechanical fabrication of robust, low-power metal-oxide gas sensors. Sensors Actuators B93 (2003) 345-349
15. Schulz O., Müller G., Lloyd M., and Ferber A. Impact of environmental parameters on the emission intensity of micromachined infrared sources. Sensors Actuators A121 (2005) 172-180
16. Sonntag J. Disordered electronic systems: concentration dependence of the dc conductivity in amorphous transition-metal-metalloid alloys (metallic regime). Phys. Rev. B 40 (1989) 3661-3671
17. Kroetz G.H., Eickhoff M.H., and Moeller H. Silicon compatible materials for harsh environment sensors. Sensors Actuators A74 (1999) 182-189
18. Krötz G., Legner W., Müller G., Grüninger E., Smith L., Leese B., Jones A., and Rushworth S. Structural and electronic characterisation of ß-SiC films on Si grown from monomethylsilane precursors. Mater. Sc. Eng. B29 (1995) 154
19. Möller H., Krötz G., Legner W., Wagner C., Müller G., Smith L., Leese B., Jones A., and Rushworth S. In situ p- and n-type doping of low-temperature grown ß-SiC epitaxial layers on silicon. Inst. Phys. Conf. Ser. 142 (1996) 497-500
20. 2 sacrificial-layer technique. Thin Solid Films 345 (1999) 197-199
21. Harris G.L. Properties of Silicon Carbide (1995), INSPEC, IEE Publishing, London. 0852968701
22. M. Eickhoff, Ph.D. Thesis, Piezowiderstandsmechanismen in Halbleitern mit großer Bandlücke, Technical University of Munich, 1999.
23. Fehlner F.P. Low temperature oxidation of metals and semiconductors. J. Electrochem. Soc. 131 7 (1984) 1645-1652
24. 2-varistors with different additives. J. Eur. Ceram. Soc. 18 (1998) 2233-2239
25. 2 based ceramics. J. Mater. Sci. 30 (1995) 5304-5306
26. Lienig J. Introduction to electromigration-aware physical design. Proceedings of the International Symposium on Physical Design, (ISPD) 2006. April (2006) pp. 39-46
27. Christou A. Elektromigration and Electronic Device Degradation (1994), John Wiley & Sons
28. 2 films. Sensors Actuators B 70 (2000) 196-202
29. 2 gas sensors: a status report. Fresenius J. Anal. Chem 365 (1999) 287
30. 2 thin films obtained by the sol-gel method. Thin Solid Films 295 (1997) 95-100
31. Gardner J.W., and Bartlett P.N. Electronic Noses: Principles and Applications (1999), Oxford University Press
32. Jackson W.B., Amer N.M., Boccara A.C., and Fournier D. Appl. Opt. 20 (1981) 1333
33. H. Curtins, M. Favre, World Scientific Publishing Company, 1988.