Characterization of InAs0.91Sb0.09 for use in mid-infrared light-emitting diodes grown by liquid phase epitaxy from Sb-rich solution

Semiconductor Science and Technology

Volumn 22, Issue 6, 2007, Pages 624-628

  Krier, A ^a   Stone, M ^a   Krier, S E ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANTIMONY; CHARACTERIZATION; ELECTROLUMINESCENCE; GADOLINIUM; LIGHT EMITTING DIODES; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; QUENCHING;

ACCEPTOR LEVELS; EXCITATION INTENSITIES; HOMOJUNCTIONS; RECOMBINATION COEFFICIENT;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34249699565     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/6/007     Document Type: Article

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