Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering

Journal of Applied Physics

Volumn 85, Issue 12, 1999, Pages 8419-8422

  Krier, A ^a   Gao, H H ^a   Sherstnev, V V ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; EXCITONS; GADOLINIUM; GETTERS; HALL EFFECT; LIQUID PHASE EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; PURIFICATION; QUANTUM EFFICIENCY; SUBSTRATES;

ELECTRON-HOLE COULOMB INTERACTIONS; FULL-WIDTH AT HALF-MAXIMUM (FWHM);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032621121     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370691     Document Type: Article

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