Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs

Journal of Electronic Materials

Volumn 33, Issue 8, 2004, Pages 867-872

  Moiseev, K D ^a   Krier, A ^b   Yakovlev, Y P ^c  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b LANCASTER UNIVERSITY   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

GaInAsSb; InAs substrates; Liquid phase epitaxy (LPE); Photoluminescence (PL)

Indexed keywords

ACTIVATION ENERGY; BAND STRUCTURE; CARRIER CONCENTRATION; FERMI LEVEL; GALLIUM ALLOYS; IONIZATION; LIQUID PHASE EPITAXY; MAGNETIC FIELD EFFECTS; SUBSTRATES; X RAY ANALYSIS;

EPITAXIAL LAYERS; EPITAXY GROWTH; RADIATIVE TRANSITIONS; ROOM TEMPERATURE;

PHOTOLUMINESCENCE;

EID: 4043086895     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0213-8     Document Type: Article

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