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Optical Materials

Volumn 6, Issue 1-2, 1996, Pages 55-61

Uncooled 4.2 μm light emitting diode based on InAs0.91Sb0.09/GaSb grown by LPE

(2) Mao, Y a Krier, A a

a LANCASTER UNIVERSITY (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DIOXIDE; CRYSTAL LATTICES; ELECTRON TRANSPORT PROPERTIES; ELECTROOPTICAL EFFECTS; FABRICATION; LIGHT SOURCES; LIQUID PHASE EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

INFRARED WAVELENGTH REGION; SUPERCOOLED GROWTH METHOD;

LIGHT EMITTING DIODES;

EID: 0030180720 PISSN: 09253467 EISSN: None Source Type: Journal
DOI: 10.1016/0925-3467(96)00011-0 Document Type: Article

Times cited : (17)

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