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Volumn 34, Issue 3, 2001, Pages 428-432

LEDs for formaldehyde detection at 3.6 μm

Author keywords

[No Author keywords available]

Indexed keywords

FORMALDEHYDE; GAS DETECTORS; HETEROJUNCTIONS; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0034819155     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/34/3/330     Document Type: Article
Times cited : (6)

References (12)
  • 1
    • 33847583304 scopus 로고    scopus 로고
    • Webpage http://www.hhs.state.ne.us/puh/enh/iaqforma.htm
    • Webpage http://www.pp.okstate.edu/ehs/training/ oshafhyd.htm Webpage http://www.hhs.state.ne.us/puh/enh/ iaqforma.htm
  • 4
    • 0032180565 scopus 로고    scopus 로고
    • InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range
    • Special issue on mid-infrared devices and materials, see other papers therein. See also vol 144 for additional related papers
    • See for example B Matveev, N V Zotova, S A Karandashov, M Remennyi, N Il'inskaya, N M Stus, V Shustov, G N Talalakin and J Malinen 1998 InAsSbP/InAs LEDs for the 3.3-5.5 μm spectral range IEE Proc. Optoelectron. 145 254-6 (Special issue on mid-infrared devices and materials, see other papers therein. See also vol 144 for additional related papers.)
    • (1998) IEE Proc. Optoelectron. , vol.145 , pp. 254-256
    • Matveev, B.1    Zotova, N.V.2    Karandashov, S.A.3    Remennyi, M.4    Il'inskaya, N.5    Stus, N.M.6    Shustov, V.7    Talalakin, G.N.8    Malinen, J.9
  • 5
    • 0343634920 scopus 로고    scopus 로고
    • Webpage http://www.ioffe.rssi.ru/
  • 6
    • 0041439146 scopus 로고    scopus 로고
    • Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices
    • Pullin M J, Hardaway H R, Heber J D and Phillips C C 1999 Type-II InAs/InAsSb strained-layer-superlattice negative luminescence devices Appl. Phys. Lett. 75 3437-9
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 3437-3439
    • Pullin, M.J.1    Hardaway, H.R.2    Heber, J.D.3    Phillips, C.C.4
  • 7
    • 0032178871 scopus 로고    scopus 로고
    • Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE
    • Stein A, Puttjer D, Behres A and Heime K 1998 Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE IEE Proc. Optoelectron. 14 257-60
    • (1998) IEE Proc. Optoelectron. , vol.14 , pp. 257-260
    • Stein, A.1    Puttjer, D.2    Behres, A.3    Heime, K.4
  • 9
    • 0033640143 scopus 로고    scopus 로고
    • Powerful interface light-emitting diodes for methane gas detection
    • Krier A and Sherstnev V V 2000 Powerful interface light-emitting diodes for methane gas detection J. Phys. D: Appl. Phys. 33 101-6
    • (2000) J. Phys. D: Appl. Phys. , vol.33 , pp. 101-106
    • Krier, A.1    Sherstnev, V.V.2
  • 11
    • 0032644463 scopus 로고    scopus 로고
    • High power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering
    • Krier A, Gao H, Sherstnev V and Yakovlev Yu 1999 High power 4.6 μm LEDs for CO detection grown by LPE using rare earth gettering Electron. Lett. 35 1665-7
    • (1999) Electron. Lett. , vol.35 , pp. 1665-1667
    • Krier, A.1    Gao, H.2    Sherstnev, V.3    Yakovlev, Yu.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.