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Volumn 84, Issue 9-10, 2007, Pages 2205-2208
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Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology
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Author keywords
Band edge work function; Ruthenium and Ruthenium oxide; Scandium; TaNx interface layer
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Indexed keywords
ATOMIC LAYER DEPOSITION;
BAND STRUCTURE;
CMOS INTEGRATED CIRCUITS;
FILM THICKNESS;
HAFNIUM COMPOUNDS;
WORK FUNCTION;
BAND EDGE WORK FUNCTION;
P-CHANNEL METAL-OXIDE SEMICONDUCTOR (PMOS);
RUTHENIUM OXIDE;
SEMICONDUCTOR MATERIALS;
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EID: 34248641995
PISSN: 01679317
EISSN: None
Source Type: Journal
DOI: 10.1016/j.mee.2007.04.028 Document Type: Article |
Times cited : (3)
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References (11)
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