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Volumn 84, Issue 9-10, 2007, Pages 2205-2208

Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology

Author keywords

Band edge work function; Ruthenium and Ruthenium oxide; Scandium; TaNx interface layer

Indexed keywords

ATOMIC LAYER DEPOSITION; BAND STRUCTURE; CMOS INTEGRATED CIRCUITS; FILM THICKNESS; HAFNIUM COMPOUNDS; WORK FUNCTION;

EID: 34248641995     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.028     Document Type: Article
Times cited : (3)

References (11)
  • 2
    • 0141649587 scopus 로고    scopus 로고
    • C. Hobbs, L. Fonseca, V. Dhandapani, S. Samavedam, B. Taylor, J. Grant, L. Dip, D. Triyoso, R. Hedge, D. Gilmer, R. Garcia, D. Roan, L. Lovejoy, R. Rai, L. Hebert, H. Tseng, B. White, P. Tobin, IEEE Technical Digest-VLSI Symposium, 2003, pp. 9-10.
  • 8
    • 0036923598 scopus 로고    scopus 로고
    • J. Lee, H. Zhong, Y.-S. Suh, G. Heuss, J. Gurganus, B. Chen, V. Misra, IEEE Electronic Device Meeting (2002) p. 359.
  • 9
    • 0842266647 scopus 로고    scopus 로고
    • J. Lee, Y.-S. Suh, H. Lazar, R. Jha, J. Gurganus, Y. Lin, V. Misra, IEEE Electronic Device Meeting (2003) p. 323.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.