메뉴 건너뛰기




Volumn 6477, Issue , 2007, Pages

High-speed, low-voltage optical receivers consisting of Ge-on-SOI photodiodes paired with CMOS ICs

Author keywords

CMOS analog integrated circuits; Germanium; Optical receivers; Photodiodes; Silicon on insulator technology

Indexed keywords

ABSORPTION LAYERS; INTEGRATED RECEIVERS; OPERATING VOLTAGE; RECEIVER ARRAYS;

EID: 34248639573     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.701003     Document Type: Conference Paper
Times cited : (6)

References (20)
  • 1
    • 33644629130 scopus 로고    scopus 로고
    • gate NFETs in microprocessor SOI CMOS technologies
    • gate NFETs in microprocessor SOI CMOS technologies," Proc. IEDM, 251-254 (2005).
    • (2005) Proc. IEDM , vol.251-254
    • Lee, S.J.1
  • 2
    • 0033324446 scopus 로고    scopus 로고
    • Ge-on-Si approaches to the detection of near-infrared light
    • L. Colace, G. Masini, and G. Assanto, "Ge-on-Si approaches to the detection of near-infrared light," IEEE J. Quant. Electron. 35(12), 1843-1852 (1999).
    • (1999) IEEE J. Quant. Electron , vol.35 , Issue.12 , pp. 1843-1852
    • Colace, L.1    Masini, G.2    Assanto, G.3
  • 4
    • 0001398969 scopus 로고    scopus 로고
    • High-quality Ge epilayers on Si with low threading-dislocation densities
    • H.-C. Luan, et al., "High-quality Ge epilayers on Si with low threading-dislocation densities," Appl. Phys. Lett. 75(19), 2909-2911 (1999).
    • (1999) Appl. Phys. Lett , vol.75 , Issue.19 , pp. 2909-2911
    • Luan, H.-C.1
  • 5
    • 33845648865 scopus 로고    scopus 로고
    • 21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers
    • Z. Huang, et al., "21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers," IEEE J. Sel. Top. Quant. Electron. 12(6), 1450-1453 (2006).
    • (2006) IEEE J. Sel. Top. Quant. Electron , vol.12 , Issue.6 , pp. 1450-1453
    • Huang, Z.1
  • 6
    • 23844495530 scopus 로고    scopus 로고
    • Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth
    • M. Jutzi, et al., "Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth," IEEE Photon. Technol. Lett. 17(7), 1510-1512 (2005).
    • (2005) IEEE Photon. Technol. Lett , vol.17 , Issue.7 , pp. 1510-1512
    • Jutzi, M.1
  • 7
    • 24644476916 scopus 로고    scopus 로고
    • High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform
    • 103501-1-3
    • J. Liu, et al., "High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform," Appl. Phys. Lett. 87(10), 103501-1-3 (2005).
    • (2005) Appl. Phys. Lett , vol.87 , Issue.10
    • Liu, J.1
  • 9
    • 7744243121 scopus 로고    scopus 로고
    • High-speed germanium-on-SOI lateral PIN photodiodes
    • G. Dehlinger et al., "High-speed germanium-on-SOI lateral PIN photodiodes," IEEE Phot. Tech. Lett. 16(11), 2547-2549 (2004).
    • (2004) IEEE Phot. Tech. Lett , vol.16 , Issue.11 , pp. 2547-2549
    • Dehlinger, G.1
  • 10
    • 2942650573 scopus 로고    scopus 로고
    • A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS
    • C. Kromer et al., "A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS," IEEE J. Solid State Circ. 39(6), 885-894 (2004).
    • (2004) IEEE J. Solid State Circ , vol.39 , Issue.6 , pp. 885-894
    • Kromer, C.1
  • 11
    • 4444324039 scopus 로고    scopus 로고
    • DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers
    • R-C. Liu, and H. Wang, "DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers", Proc. IEEE RFIC Symposium, Fort Worth, TX, USA, 535-538 (2004).
    • (2004) Proc. IEEE RFIC Symposium, Fort Worth, TX, USA , vol.535-538
    • Liu, R.-C.1    Wang, H.2
  • 12
    • 20444502240 scopus 로고    scopus 로고
    • A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog frontend
    • W.-Z. Chen, Y.-L. Cheng, and D.-S. Lin, "A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog frontend," IEEE J. Solid State Circ. 40(6), 1388-1396 (2005).
    • (2005) IEEE J. Solid State Circ , vol.40 , Issue.6 , pp. 1388-1396
    • Chen, W.-Z.1    Cheng, Y.-L.2    Lin, D.-S.3
  • 14
    • 0036767373 scopus 로고    scopus 로고
    • High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology
    • S. M. Csutak, et al., "High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology," IEEE J. Lightwave Technol. 20(9), 1724-1729 (2002).
    • (2002) IEEE J. Lightwave Technol , vol.20 , Issue.9 , pp. 1724-1729
    • Csutak, S.M.1
  • 15
    • 0038190878 scopus 로고    scopus 로고
    • 10-Gb/s all-silicon optical receiver
    • B. Yang, et al, "10-Gb/s all-silicon optical receiver," IEEE Phot. Tech. Lett. 15(5), 745-747 (2003).
    • (2003) IEEE Phot. Tech. Lett , vol.15 , Issue.5 , pp. 745-747
    • Yang, B.1
  • 16
    • 33747780967 scopus 로고    scopus 로고
    • 11Gb/s monolithically integrated silicon optical receiver for 850 nm wavelength
    • paper 13.5, San Francisco, CA, USA
    • R. Swoboda, and H. Zimmermann, "11Gb/s monolithically integrated silicon optical receiver for 850 nm wavelength", Proc. of ISSCC, paper 13.5, San Francisco, CA, USA, (2006).
    • (2006) Proc. of ISSCC
    • Swoboda, R.1    Zimmermann, H.2
  • 17
    • 33749073423 scopus 로고    scopus 로고
    • A 15-Gb/s, 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC
    • C. L. Schow, et al., "A 15-Gb/s, 2.4-V optical receiver using a Ge-on-SOI photodiode and a CMOS IC," IEEE Phot. Tech. Lett. 18(19), 1981-1983 (2006).
    • (2006) IEEE Phot. Tech. Lett , vol.18 , Issue.19 , pp. 1981-1983
    • Schow, C.L.1
  • 19
    • 33750000358 scopus 로고    scopus 로고
    • A 25-Gb/s transimpedance amplifier in 0.13 μm CMOS
    • C. L. Schow, et al., "A 25-Gb/s transimpedance amplifier in 0.13 μm CMOS," Electron. Lett. 42(21), 1240-1241 (2006).
    • (2006) Electron. Lett , vol.42 , Issue.21 , pp. 1240-1241
    • Schow, C.L.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.