25Gbit/s transimpedance amplifier in 0.13m CMOS

Electronics Letters

Volumn 42, Issue 21, 2006, Pages 1240-1241

  Schow, C L ^a   Schares, L ^a   John, R A ^a   Fischer, L S ^b   Guckenberger, D ^a,c  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c CISCO SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INPUT CURRENTS; POWER CONSUMPTION; TRANSIMPEDANCE AMPLIFIERS; TRANSIMPEDANCE GAIN;

AMPLIFIERS (ELECTRONIC); BANDWIDTH; BIT ERROR RATE; ELECTRIC IMPEDANCE; FABRICATION; NATURAL FREQUENCIES; POWER CONTROL;

CMOS INTEGRATED CIRCUITS;

EID: 33750000358     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20062287     Document Type: Article

References (3)

1. Kromer, C.: et al. ' A low-power 20-GHz 52-dBΩ transimpedance amplifier in 80-nm CMOS ', IEEE J. Solid-State Circuits, 2004, 39, (6), p. 885-894 10.1109/JSSC.2004.827807 0018-9200
2. Liu, R.-C., and Wang, H.: ' DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers ', Proc. IEEE RFIC Symp., Fort Worth, USA, June, 2004, p. 535-538
3. Guckenberger, D., and Kornegay, K.: ' Novel low-voltage, low-power Gb/s transimpedance amplifier architecture ', VLSI Circuits and Systems, Proc. SPIE, 2003, 5117, p. 274-285