High-speed monolithically integrated silicon photoreceivers fabricated in 130-nm CMOS technology

Journal of Lightwave Technology

Volumn 20, Issue 9, 2002, Pages 1724-1729

  Csutak, S M ^a,b   Schaub, J D ^a,c   Wu, W E ^b   Shimer, R ^b   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

^b MOTOROLA INC   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Fiber optics; Optical receivers; Optoelectronic integrated circuits; Photodiodes

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC POWER MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; GAIN MEASUREMENT; MICROELECTRONIC PROCESSING; MONOLITHIC INTEGRATED CIRCUITS; NANOTECHNOLOGY; PHOTODETECTORS; PHOTODIODES; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY;

INTEGRATED LATERAL PHOTODETECTOR; MONOLITHICALLY INTEGRATED SILICON PHOTORECEIVERS; OPTICAL POWER; OPTICAL RECEIVERS; TRANSIMPEDANCE GAIN;

INTEGRATED OPTOELECTRONICS;

EID: 0036767373     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2002.802221     Document Type: Article

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