Nanomanipulation measurement and PIC simulation of field-emission properties from a single crystallized silicon nano-emitter

Nanotechnology

Volumn 18, Issue 22, 2007, Pages

  Cheng, T C ^a   Hsu, K H ^b,c   Chen, P Y ^a,b   Huang, W J ^a   Wu, J S ^b   Hsueh, H T ^a   Chang, M N ^a  

^a Hsinchu Science Park   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL SPACE ORGANIZATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DRY ETCHING; FIELD EMISSION; MATHEMATICAL MODELS; MICROFABRICATION; SINGLE CRYSTALS;

FIELD-EMISSION CURRENTS; NANOMANIPULATION MEASUREMENTS; PARTICLE-IN-CELL (PIC) CODE; SINGLE CRYSTALLIZED SILICONS;

NANOTECHNOLOGY;

SILICON;

ARTICLE; CRYSTALLIZATION; ELECTRIC POTENTIAL; FIELD EMISSION; MASS SPECTROMETRY; MEASUREMENT; PRIORITY JOURNAL; SIMULATION;

EID: 34248172014     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/22/225503     Document Type: Article

References (31)

1. Ng K L, Yuan J, Cheung J T and Cheah K W 2002 Solid State Commun. 123 205
2. Nillson L, Groening O, Emmenegger C, Kuettel O, Schaller E and Schlapbach L 2000 Appl. Phys. Lett. 76 2071
3. Temple D 1999 Mater. Sci. Eng. Rep.: Rev. J. 24 185
4. Merkulov V I, Lowndes D H and Baylor L R 2001 J. Appl. Phys. 89 1933
5. Guillorn M A, Melechko A V, Merkulov V I, Hensley D K, Simpson M L and Lowndes D H 2002 Appl. Phys. Lett. 81 3660
6. Guillorn M A, Melechko A V, Merkulov V I, Ellis E D, Britton C L, Simpson M L, Lowndes D H and Baylor L R 2001 Appl. Phys. Lett. 79 3506
7. Brodie I and Spindt C A 1992 Adv. Electron Electron Phys. 83 1
8. Holland C E, Rosengreen A and Spindt C A 1991 IEEE Trans. Electron Devices 38 2368
9. Schwoebel P R and Brodie I 1995 J. Vac. Sci. Technol. B 13 1391
10. Spindt C A, Brodie I, Humphrey L and Westerberg E R 1976 J. Appl. Phys. 47 5248
11. Rakhshandehroo M R, Weigold J W, Tian W C and Pang S W 1998 J. Vac. Sci. Technol. B 16 2849
12. Rakhshandehroo M R and Pang S W 1999 IEEE Trans. Electron Devices 46 792
13. Smith R C, Co D C and Silva S R P 2005 Appl. Phys. Lett. 87 103112
14. Bonard J M, Dean K A, Coll B F and Klinke C 2002 Phys. Rev. Lett. 89 197602
15. Gangloff L et al 2002 Nano Lett. 4 1575
16. Edgcombe C J and Valdré U 2002 Phil. Mag. B 82 987
17. Wang C, Wang B and Zhao H 1997 J. Vac. Sci. Technol. B 15 394
18. Lei W, Wang B and Yin H 1998 J. Vac. Sci. Technol. B 16 2881
19. Hu Y and Huang C H 2003 J. Vac. Sci. Technol. B 21 1648
20. Hong M A 1994 J. Vac. Sci. Technol. B 12 764
21. Fowler R H and Nordheim L 1928 Proc. R. Soc. A 119 173
22. Birshall C K 1991 IEEE Trans. Plasma Sci. 19 65
23. Hsu K H, Chen P Y, Hung C T, Chen L H and Wu J S 2006 Comput. Phys. Commun. 174 948
24. Lian Y Y, Hsu K H, Shao Y L, Lee Y M, Jeng Y W and Wu J S 2006 Comput. Phys. Commun. 175 721
25. Hwang F N and Cai X C 2005 J. Comput. Phys. 205 666
26. Saad Y 2003 Iterative Methods for Sparse Linear Systems (Philadelphia, PA: Society for Industrial and Applied Mathematics)
27. Wu J S and Tseng K C 2005 Int. J. Numer. Methods Eng. 63 37
28. Zienkiewicz O C and Chu J Z 1987 Int. J. Numer. Methods Eng. 24 337
29. Sze S M 1985 Physics of Semiconductor Devices (New York: Wiley)
30. Wu J S and Lian Y 2003 Comput. Fluids 32 1133
31. Morales A M and Lieber C M 1998 Science 279 208