Self-aligned gated field emission devices using single carbon nanofiber cathodes

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3660-3662

  Guillorn, M A ^a   Melechko, A V ^a   Merkulov, V I ^a   Hensley, D K ^a   Simpson, M L ^a   Lowndes, D H ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EMISSION DEVICES; FIELD-EMISSION CHARACTERISTICS; FOWLER-NORDHEIM; GATE APERTURES; SELF-ALIGNED; SINGLE CARBON NANOFIBERS; VERTICALLY ALIGNED CARBON NANOFIBERS;

CARBON NANOFIBERS; CHEMICAL MECHANICAL POLISHING; ELECTRODES; FIELD EMISSION; FIELD EMISSION DISPLAYS;

FIELD EMISSION CATHODES;

EID: 79956041747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517718     Document Type: Article

References (21)

1. X. Xu and G. R. Brandes, Mater. Res. Soc. Symp. Proc. 509, 107 (1998). mrs MRSPDH 0272-9172
2. Q. H. Wang, M. Yan, and R. P. H. Chang, Appl. Phys. Lett. 78, 1294 (2001). apl APPLAB 0003-6951
3. Y. H. Lee, Y. T. Jang, D. H. Kim, J. H. Ahn, and B. K. Ju, Adv. Mater. 13, 479 (2001). amt ADVMEW 0935-9648
4. D. S. Hsu and J. Shaw, Appl. Phys. Lett. 80, 118 (2002). apl APPLAB 0003-6951
5. H. Busta, D. Furst, A. T. Rakhimov, V. A. Samorodov, B. V. Seleznez, N. V. Suetin, A. Silzars, Appl. Phys. Lett. 78, 3418 (2001). apl APPLAB 0003-6951
6. M. A. Guillorn, M. L. Simpson, G. J. Bordonaro, V. I. Merkulov, L. R. Baylor, and D. H. Lowndes, J. Vac. Sci. Technol. B 19, 573 (2001). jvb JVTBD9 0734-211X
7. G. Pirio, P. Legagneux, D. Pribat, K. B. K. Teo, M. Chhowalla, G. A. J. Amaratunga, and W. I. Milne, Nanotechnology 13, 1 (2001). nno NNOTER 0957-4484
8. M. A. Guillorn, A. V. Melechko, V. I. Merkulov, E. D. Ellis, C. L. Britton, M. L. Simpson, D. H. Lowndes, and L. R. Baylor, Appl. Phys. Lett. 79, 3506 (2001). apl APPLAB 0003-6951
9. M. A. Guillorn, E. D. Ellis, M. L. Simpson, A. V. Melechko, V. I. Merkulov, G. J. Bordonaro, L. R. Baylor, and D. H. Lowndes, J. Vac. Sci. Technol. B 19, 2598 (2001). jvb JVTBD9 0734-211X
10. W. A. de Heer, A. Chatelain, and D. Ugaarte, Science 269, 1179 (1995). sci SCIEAS 0036-8075
11. F. S. Baker, A. R. Osborn, and J. Williams, J. Phys. D 7, 2105 (1974). jpd JPAPBE 0022-3727
12. K. A. Dean and B. R. Chalamala, Appl. Phys. Lett. 75, 3017 (1999). apl APPLAB 0003-6951
13. L. R. Baylor, V. I. Merkulov, E. D. Ellis, M. A. Guillorn, D. H. Lowndes, A. V. Melechko, M. L. Simpson, and J. H. Whealton, J. Appl. Phys. 91, 4602 (2002). jap JAPIAU 0021-8979
14. V. I. Merkulov, D. H. Lowndes, Y. Y. Wei, G. Eres, and E. Voelkl, Appl. Phys. Lett. 76, 3555 (2000). apl APPLAB 0003-6951
15. M. A. Guillorn, T. E. McKnight, A. Melechko, V. I. Merkulov, P. F. Britt, D. W. Austin, D. H. Lowndes, and M. L. Simpson, J. Appl. Phys. 91, 3824 (2002). jap JAPIAU 0021-8979
16. M. A. Guillorn, M. L. Simpson, G. J. Bordonaro, V. I. Merkulov, L. R. Baylor, and D. H. Lowndes, J. Vac. Sci. Technol. B 19, 573 (2001). jvb JVTBD9 0734-211X
17. T. T. Doan, J. B. Rolfson, T. A. Lowrey, D. A. Cathey, US Patent No. 5,229,331 (14 February 1992).
18. J. H. Lee, Y. H. Song, S. Y. Kang, S. G. Kim, and K. I. Cho, J. Vac. Sci. Technol. B 16, 811 (1998). jvb JVTBD9 0734-211X
19. M. Ding, H. Kim, and A. I. Akinwande, IEEE Electron Device Lett. 21, 66 (2000). edl EDLEDZ 0741-3106
20. V. I. Merkulov, A. V. Melechko, M. A. Guillorn, D. H. Lowndes, and M. L. Simpson, Appl. Phys. Lett. 79, 2970 (2001). apl APPLAB 0003-6951
21. Defined as the percentage of the total emitted current collected by the anode relative to the amount of current collected by the gate electrode.