Improvement in charge retention in Au-nanocrystal-based memory structures by employing (Ba0.5 Sr0.5) Ti O3 as control oxide

Applied Physics Letters

Volumn 90, Issue 18, 2007, Pages

  Wang, Chen Chan ^a   Liang, Chun Sheng ^a   Tseng, Jiun Yi ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; ELECTRON TUNNELING; ENERGY GAP; GATE DIELECTRICS; GOLD; NANOCRYSTALS;

CHARGE RETENTION; CORE SHELLS; MEMORY STRUCTURES; PARTIAL DISSOLUTION;

SHAPE MEMORY EFFECT;

EID: 34247859274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2734371     Document Type: Article

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