High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties

Applied Physics Letters

Volumn 78, Issue 24, 2001, Pages 3824-3826

  Jin, Zhengwu ^a   Fukumura, T ^a   Kawasaki, M ^a   Ando, K ^b   Saito, H ^b   Sekiguchi, T ^c   Yoo, Y Z ^a   Murakami, M ^a   Matsumoto, Y ^a   Hasegawa, T ^a   Koinuma, H ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035844354     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377856     Document Type: Article

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