Detection of border trap density and energy distribution along the gate dielectric bulk of high-κ gated MOS devices

IEEE Electron Device Letters

Volumn 28, Issue 5, 2007, Pages 432-435

  Lu, Chun Yuan ^a   Chang Liao, Kuei Shu ^a   Lu, Chun Chang ^a   Tsai, Ping Hung ^a   Wang, Tien Ko ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Border traps; Charge pumped per cycle (Qcp); Charge pumping (CP); Depth profile; HfOxNy dielectric; Near interface traps

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRAPPING; DIELECTRIC MATERIALS; HAFNIUM COMPOUNDS; OXIDES;

BORDER-TRAP DISTRIBUTION; CHARGE PUMPING; TUNNELING DEPTH;

MOSFET DEVICES;

EID: 34247641747     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.895379     Document Type: Article

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