A study of electrical properties and microstructure of nitrogen-doped poly-SiC films deposited by LPCVD

Sensors and Actuators, A: Physical

Volumn 136, Issue 2, 2007, Pages 613-617

  Noh, Sangsoo ^a   Fu, Xiaoan ^a   Chen, Li ^a   Mehregany, Mehran ^a  

^a Case Western Reserve University   (United States)

Author keywords

SiC; LPCVD; Nitrogen doped; Poly SiC; TCR

Indexed keywords

DOPING (ADDITIVES); GRAIN SIZE AND SHAPE; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; POLYMER FILMS; SILICON CARBIDE; SURFACE REACTIONS;

DOPANT SOURCE GAS; DOPING CONCENTRATION; TEMPERATURE COEFFICIENT OF RESISTANCE (TCR);

POLYCRYSTALLINE MATERIALS;

EID: 34247592360     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2006.12.024     Document Type: Article

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