Study of nickel silicide contact on Si/Si1-xGex

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 544-546

  Yang, Tsung Hsi ^a   Luo, Guangli ^a   Chang, Edward Yi ^a   Yang, Tsung Yeh ^b   Tseng, Hua Chou ^c   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TATUNG UNIVERSITY   (Taiwan)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Agglomerate; Ni; SiGe; Silicide

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; LEAKAGE CURRENTS; MATERIALS TESTING; NICKEL COMPOUNDS; SEMICONDUCTING SILICON;

CONTACT RESISTIVITY; NICKEL GERMANOSILICIDE; NICKEL SILICIDE;

SEMICONDUCTOR DIODES;

EID: 0141563627     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815944     Document Type: Letter

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