Break-through of the Si limit under 300V breakdown voltage with new concept power device: Super 3D MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 233-236

  Sakakibara, Jun ^a   Suzuki, Naohiro ^a   Yamaguchi, Hitoshi ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON;

POWER DEVICES;

MOSFET DEVICES;

EID: 0036045987     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)