Ultra low oil-resistance super 3D MOSFET under 300V breakdown voltage

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 209-212

  Sakakibara, Jun ^a   Urakami, Yasushi ^a   Yamaguchi, Hitoshi ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; FABRICATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS;

CHANNEL RESISTANCE; ELECTRIC FIELD CONCENTRATION; SPECIFIC ON-RESISTANCE; TRENCH GATE;

MOSFET DEVICES;

EID: 4944261408     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. rd generation trench gate MOSFET", Proc. ISPSD, pp. 209-212, 1999.
2. J. Zeng, et. al., "An ultra dense trench-gated power MOSFET technology using a self-aligned process", Proc. ISPSD, pp. 147-150, 2001.
3. B. J. Baliga, "Trends in Power Semiconductor Devices", IEEE Trans. Electron Device, vol. 43, pp. 1717-1731, 1996
4. Jun Sakakibara, et al., "Break-through of the Si limit under 300V breakdown voltage with new concept power device : Super 3D MOSFET", Proc. ISPSD, pp. 233-236, 2002.
5. Hitoshi Yamaguchi, et al., "Ultra Low On-resistance Super 3D MOSFET", Proc. ISPSD, pp. 316-319, 2003.