Floating island and thick bottom oxide trench gate MOSFET (FITMOS) -A 60V ultra low on-resistance novel MOSFET with superior internal body diode

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2005, Pages 43-46

  Takaya, Hidefumi ^a   Miyagi, Kyosuke ^a   Hamada, Kimimori ^a   Okura, Yasushi ^b   Tokura, Norihito ^b   Kuroyanagi, Akira ^b  

^a TOYOTA MOTOR CORPORATION   (Japan)

^b DENSO CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; FABRICATION; GATES (TRANSISTOR); SEMICONDUCTOR DIODES;

FLOATING ISLANDS; TRENCH GATES; VOLTAGE RANGE;

MOSFET DEVICES;

EID: 27744561972     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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