Effects of alloy intermixing on the lateral confinement potential in InAs/GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy

Applied Physics Letters

Volumn 90, Issue 16, 2007, Pages

  Zibik, E A ^a   Ng, W H ^a   Wilson, L R ^a   Skolnick, M S ^a   Cockburn, J W ^a   Gutierrez, M ^a   Steer, M J ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ALLOYING; ANNEALING; CONDUCTION BANDS; GROUND STATE; INDIUM ARSENIDE; SEMICONDUCTING GALLIUM ARSENIDE;

CONDUCTION BAND STATES; ELECTRON PHONON COUPLING; FAR INFRARED ABSORPTION SPECTROSCOPY; TRANSITION ENERGY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247533310     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2724893     Document Type: Article

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