Influence of composition on the piezoelectric effect and on the conduction band energy levels of inxGa1-xAs/GaAs quantum dots

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 5169-5172

  Migliorato, M A ^a   Powell, D ^a   Liew, S L ^a   Cullis, A G ^a   Navaretti, P ^a   Steer, M J ^a   Hopkinson, M ^a   Fearn, M ^b   Jefferson, J H ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b QINETIQ   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

COMPOSITIONAL GRADIENTS; CONDUCTION BAND ENERGY LEVELS; PIEZOELECTRIC FIELDS; STRUCTURAL ANISOTROPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 9744282628     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1793333     Document Type: Article

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