Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Seguin, R ^a   Schliwa, A ^a   Germann, T D ^a   Rodt, S ^a   Potschke K ^a   Strittmatter, A ^a   Pohl, U W ^a   Bimberg, D ^a   Winkelnkemper, M ^a,b   Hammerschmidt, T ^b   Kratzer, P ^b,c  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CATHODOLUMINESCENCE; ELECTRONIC PROPERTIES; ELECTRONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EXCITONIC COMPLEXES; SUBSTANTIAL REDUCTIONS; WAVE FUNCTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33846073964     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2424446     Document Type: Article

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