Controlling line-edge roughness and reactive ion etch lag in sub-150 nm features in borophosphosilicate glass

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Bhatnagar, Parijat ^a   Panda, Siddhartha ^b,d   Edleman, Nikki L ^b   Allen, Scott D ^b   Wise, Richard ^b   Mahorowala, Arpan ^c  

^a Cornell University   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

^d INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RATIO; BOROPHOSPHOSILICATE GLASSES; FLUOROHYDROCARBON GASES; LINE EDGE ROUGHNESS (LER);

BOROSILICATE GLASS; FLOW RATE; FLUOROCARBONS; REACTIVE ION ETCHING;

SURFACE ROUGHNESS;

EID: 34247252482     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2717141     Document Type: Article

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