A flexible, low-cost, high performance SiGe: C BiCMOS process with a one-mask HBT module

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 783-786

  Knoll, D ^a   Ehwald, K E ^a   Heinemann, B ^a   Fox, A ^a   Blum, K ^a   Rucker H ^a   Furnhammer F ^a   Senapati, B ^a   Barth, R ^a   Haak, U ^a   Hoppner W ^a   Drews, J ^a   Kurps, R ^a   Marschmeyer, S ^a   Richter, H H ^a   Grabolla, T ^a   Kuck, B ^a   Fursenko, O ^a   Schley, P ^a   Scholz, R ^a   Tillack, B ^a   Yamamoto, Y ^a   Kopke K ^a   Wulf, H E ^a   Wolansky, D ^a   Winkler, W ^a   more..

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; MASKS; MICROPROCESSOR CHIPS; SILICON;

SINGLE-CHIP SOLUTIONS;

CMOS INTEGRATED CIRCUITS;

EID: 0036927966     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2002.1175955     Document Type: Article

References (7)

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